| PART |
Description |
Maker |
| S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56
2M X 16 FLASH 3V PROM, 100 ns, PBGA56
4M X 16 FLASH 3V PROM, 90 ns, PBGA64
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes
4M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Spansion, Inc.
SPANSION LLC
|
| S29GL01GP12TFI023 S29GL128P13FAI023 S29GL01GP12FAI |
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 110 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 3.0伏只页面模式闪存具有90纳米MirrorBit工艺技
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 130 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 8M X 16 FLASH 3V PROM, 110 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 130 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 120 ns, PBGA64
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| LH28F016SCHB LH28F016SCHB-L95 LHF16C13 LH28F016SCR |
LH28F016SCHSR-L120 16M (2M x 8)Smart Voltage Flash Memory 40 pin STSOP
LH28F016SCHSR-L150 16M (2M x 8)Smart Voltage Flash Memory 40 pin STSOP
LH28F016SCN-L100 16M (2M x 8)Smart Voltage Flash Memory
16Mbit Flash Memory
LH28F016SCR-L100 16M (2M x 8)Smart Voltage Flash Memory
LH28F016SCR-L120 16M (2M x 8)Smart Voltage Flash Memory
LH28F016SCR-L95 16M (2M x 8)Smart Voltage Flash Memory
LH28F016SCHSR-L100 16M (2M x 8)Smart Voltage Flash Memory 40 pin STSOP
|
SHARP[Sharp Electrionic Components]
|
| LH28F160BJHE-TTL90 LHF16J04 |
16M-BIT ( 1Mbit x16 / 2Mbit x8 )Boot Block Flash MEMORY(16M 1Mx16 / 2Mx8 )Boot Block 闪速存储器)
Flash Memory 16M (1M × 16/2M × 8)
|
Sharp Corporation
Sharp Electrionic Components
|
| EN29GL256H EN29GL256H-90ZIP EN29GL256L-90BAIP EN29 |
256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
|
Eon Silicon Solution Inc.
|
| S29GL032A10FFIR22 S29GL032A10TFIR32 S29GL032A10TFI |
Up-to-200kHz Multi-topology PWM Voltage-Mode Controller - PB Free; Package: SOIC 14 LEAD; No of Pins: 14; Container: Tape and Reel; Qty per Container: 2500
Up-to-200kHz Multi-topology PWM Voltage-Mode Controller - PB Free; Package: PDIP-14; No of Pins: 14; Container: Rail; Qty per Container: 500
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY 2M X 16 FLASH 3V PROM, 110 ns, PDSO56
3-36V Quad Channel Operational Amplifier, Ta = -40 to 85°C - Pb-free; Package: PDIP-14; No of Pins: 14; Container: Rail; Qty per Container: 500 64兆位32MEGABIT 3.0螺栓只页面模式闪
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY 2M X 16 FLASH 3V PROM, 110 ns, PDSO48
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY 2M X 16 FLASH 3V PROM, 100 ns, PDSO48
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY 2M X 16 FLASH 3V PROM, 100 ns, PBGA48
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY 2M X 16 FLASH 3V PROM, 90 ns, PBGA48
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY 64兆位32MEGABIT 3.0螺栓只页面模式闪
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY 2M X 16 FLASH 3V PROM, 110 ns, PBGA64
64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY 2M X 16 FLASH 3V PROM, 100 ns, PBGA64
Up-to-100kHz Multi-topology Burst-Mode Voltage-Mode Controller with 40V / 1.5A Switch; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Tape and Reel; Qty per Container: 2500
1.5A Step-Up/Step-Down/Inv Regulator with 40V / 1.5A Switch (Ext Temp); Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Tape and Reel; Qty per Container: 2500
1.5A Step-Up/Step-Down/Inv Regulator with 40V / 1.5A Switch (Ext Temp); Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Rail; Qty per Container: 98
3-36V Quad Channel Operational Amplifier, Ta = -40 to 85°C; Package: PDIP-14; No of Pins: 14; Container: Rail; Qty per Container: 500
|
SPANSION LLC
Spansion, Inc.
Spansion Inc.
|
| N25Q128A13BF840E N25Q128A23BF840E N25Q128A33BF840E |
16M X 8 FLASH 3V PROM, PDSO16
16M X 8 FLASH 3V PROM, PBGA24
128-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase on boot sectors,XiP enabled, serial flash memory with 108 MHz SPI bus interface
|
Numonyx B.V
|
| S29GL128N90FAI010 S29GL128N90FAI012 S29GL128N90FAI |
3.0 VOLT-ONLY PAGE MODE FLASH MEMORY FEATURING 110 NM MIRRORBIT⒙ PROCESS TECHNOLOGY
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
|
SPANSION[SPANSION]
|
| LH28F016SCT-L95 LHF16C17 |
16M Flash Memory 2M (bb8)
16M Flash Memory 2M ()
16M Flash Memory 2M (×8)
|
Sharp Corporation
Sharp Electrionic Components
|
| LH28F128BF |
(LH28FxxxBF) Page Mode Dual Work Flash Memory
|
Sharp
|
| S70GL01GN00 S70GL01GN0007 |
1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit垄芒 Process Technology
1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit?/a> Process Technology
|
SPANSION
|
